Cap

In_0.53Ga_0.47As

p

1 × 10¹⁹ cm⁻³

30 nm

Barrier

In_0.52Al_0.48As

p

1 × 10¹⁹ cm⁻³

200 nm

Absorber

In_0.53Ga_0.47As

p

2.5 × 10¹⁸ cm⁻³

150 nm

In_0.53Ga_0.47As

p

1 × 10¹⁸ cm⁻³

150 nm

In_0.53Ga_0.47As

p

4 × 10¹⁷ cm⁻³

150 nm

Grading

InGaAlAs

undoped

50 nm

Spacer

In_0.52Al_0.48As

undoped

100 nm

Charge

In_0.52Al_0.48As

p

4 × 10¹⁷ cm⁻³

90 nm

Multiplication

In_0.52Al_0.48As

undoped

150 nm

Buffer

In_0.52Al_0.48As

n

5 × 10¹⁸ cm⁻³

800 nm

Substrate

InP

n

SI