Journal of Power and Energy Engineering, 2014, 2, 477-482
Published Online April 2014 in SciRes. http://www.scirp.org/journal/jpee
http://dx.doi.org/10.4236/jpee.2014.24064
How to cite this paper: Du, L.J., et al. (2014) An Ultra-Low Quiescent Current CMOS Low-Dropout Regulator with Small
Output Voltage Va riations. Journal of Power and Energy Engineering, 2, 477-482.
http://dx.doi.org/10.4236/jpee.2014.24064
An Ultra-Low Quiescent Current CMOS
Low-Dropout Regulator with Small Output
Voltage Variations
Longjie Du1, Yizhong Yang1, Yang Chen1, Guangjun Xie1,2, Xin Cheng1,2*
1School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, China
2State Key Lab of ASIC and System, Fudan University, Shanghai, China
Received Dec emb er 2013
Abstract
An ultra-low quiescent current low-dropout regulator with small output voltage variations and
improved load regulation is presented in this paper. It makes use of dynamically-biased shunt
feedback as the buffer stage and the LDO regulator can be stable for all load conditions. The pro-
posed structure also employs a momentarily current-boosting circuit to reduce the output voltage
to the normal value when output is switched from full load to no load. The whole circuit is de-
signed in a 0.18 μm CMOS technology with a quiescent current of 550 nA. The maximum out-
put-voltage variation is less than 20 mV when used with 1 μF external capacitor.
Keywords
Ultra-Low Quiescent Current; Low-Dropout Regul ato r; Small Output Vari ati ons
1. Introduction
Power-management circuits are becoming more important in portable electronics systems such as smart phones,
laptops, and tablets. The performance of these portable devices is increasing fast and the battery life is becoming
the bottleneck for their development. So it is in great demand to design the power-management circuits with ul-
tra-low power dissipation and a wide output current range.
For power-management system, low-dropout regulator is the most common block due to better load transient
response, less noise, simpler and lower cost than the switching regulator counterparts [1]-[3]. However, when it
comes to design an ultra-low quiescent current LDO, it is difficult to satisfy these characteristics. In a co nve n-
tional low-dropout regulator, there are several specifications to describe the LDO’s performance, such as line
and load regulations, loop stability and transient response. When the whole LDO’s quiescent current is low, the
loop stability and transient response are sacrificed a lot due to the low frequency pole at the error amplifier out-
put, the decreased loop bandwidth and the limited slew rate at the gate of power transistor. Furthermore, the de-
mand of a large maximum load-current also affects the loop stability and transient response because it introduc-
*
Corresponding author.

L. J. Du et al.
478
es a large capacitor at the gate of power transistor. The large capacitor will reduce the value of the parasitic pole
present at the gate of the power transistor and require more sourcing and sinking currents at the gate to maintain
the slew rate. Therefore, there are two main challenges in the ultra-low quiescent current design. One is the fre-
quency compensation strategy for the stability under whole load-current range, and the other is how to achieve
good transient response [4].
Different approaches have been reported to address the above issues. For frequency compensation, the con-
ventional method is making use of the equivalent series resistance (ESR) of the output capacitor to create a con-
stant zero for compensating the non-dominant pole [5] [7]-[9]. However, it may not be fit for LDO with wide
load current requirement, because the frequency of the output pole will change a lot when the load current varies.
In [1], an emitter-follower with small output resistance has been adopted to push the pole at the gate of the pow-
er device beyond the unity-gain frequency of the LDO loop. However, when the LDO is used to source a larger
load current, more current are needed in its emitter-follower. Thus the resistance at the gate of the power tran-
sistor can be further lowered to compensate the larger gate capacitance. Further architecture is used in [3] [6] to
push the pole at the gate of the power transistor to a higher frequency.
Both of the loop-gain bandwidth and the slew rate at the gate of the power transistor dominate the transient
response of a LDO. There are typically two methods to raise the slew rate at the gate of the power transistor.
One is using a smaller area power transistor [10], and the other is providing more sourcing and sinking currents
at the gate capacitor. Many design approaches have been proposed to realize the current boosting at the gate of
power transistor they can be classified into three techniques depending on the changing time of the biasing cur-
rent. In [11], the biasing current is always high and independent of the load current. Obviously, this approach is
not suit for low quiescent current design for the high biasing current at light load. Consequently, the adap-
tive-biasing technique which can increase the bias current according to the magnitude of the output current is
proposed in [1] [3] [6]. To further reduce power dissipation in the steady state, dynamic biasing which only in-
creases the biasing current at the transient instant when the output current is changed is presented [4] [5] [12].
This paper presents an ultra-low quiescent LDO regulator using an adaptive-biasing voltage buffer and an
overshoot reduction network in 0.18 μm CMOS process. Section 2 discusses the structure as well as the stability
of the proposed LDO regulator. In Section 3, the details of the circuit implementation of the proposed structure
are described. Simulation results and conclusions are given in the last two sections.
2. Structure of the Proposed LDO
Figure 1 shows the proposed LDO regulator architecture. It comprised a folded-cascode error amplifier, an
adaptive biasing voltage buffer, a power transistor MP, an overshoot reduction circuitry, a frequency compensa-
tion network and a feedback network. The adaptive-biasing voltage buffer is employed for isolating the large
parasitic capacitance at the gate of MP from the high impedance at the error amplifier output. It is also used for
the slew rate enhancement. In addition, the overshoot reduction network can decrease the output voltage down
to the normal value at no load condition.
Thanks to the low out impedance of the voltage buffer, the pole at the gate of power transistor is located at
sufficiently high frequencies under different load currents.
Figure 1. Structure of the proposed LDO regulator.
-
+
Frequency
Compensation
Feedback Network
Overshoot
Reduction
RO
Error
Amp
Vref
CL
MP
Vout
Buffer

L. J. Du et al.
479
The stability of the whole system is achieved by cascode compensation technique, which allows the LDO to
achieve wider unity gain frequency and enhanced power supply rejection [3]. The sma ll-signal model of the pro-
posed LDO is shown in Figur e 2. Here, gm1 and gmp represent the transconductances of input gain stage of error
amplifier and power transistor respectively, R1 is the output resistance of the error amplifier, C1 is the input ca-
pacitance of the buffer stage, CL is the output capacitance, and RO is the equivalent resistance seen at the output
of the LDO. The cascode compensation is formed by gmc and CC and only takes effect at heavy load. So at light
load, the pole located at the output of the LDO is the dominant pole, and the pole located at the output of the er-
ror amplifier is the non-dominant pole. They are given by
3 11
1/( )
dB
p RC
−
=
(1)
1/( )
ndO O
p RC=
(2)
When the output load is heavy, the impedance at the output of LDO becomes small while the capacitor at the
output or the error amplifier becomes large because of the enhancement of a Miller capacitance (gmpRO) CC. So
the above two poles will shift their positions at heavy load. The worst-case stability resides between light load
and heavy load [6].
3. Circuit Design and Implementation
The full schematic of the proposed LDO is shown in Fig ure 3. The error amplifier is realized by a single folded-
cascode stage with transistors M0-M8. The voltage buffer is formed by a source-follower M12. And the transistor
M14 is the feedback device connected in parallel to the output of M12 in order to reduce the output impedance.
The adaptive biasing network is formed by transistor M15 and M16, which is used for both compensation and
slew rate enhancement. The feedback network is realized by a string of diode-connected PMOS transistors M18 -
M21 biased in the sub threshold region to minimize quiescent as well as the silicon area. Transistor M6 and capa-
citor CC form the cascode compensation to make the LDO be stable under full load range. Finally, the overshoot
reduction network is realized by Rb, Cb and transistor M17. In a conventional LDO, when the load current sud-
denly decreases to zero, the diode-connected feedback network PMOS is the only path to discharge the extra
current from power transistor MP. So, even if the error amplifier reacts quickly to increase the gate voltage of MP,
the overshoot appears at the output would still take a very long time to recover to the nominal value. But with
the help of overshoot reduction network, when the gate voltage of MP suddenly increases, the change is sensed
by Cb and is then coupled to the gate of M17. Hence transistor M17 provides the second path to discharge the
overshoot. When the gate voltage of MP becomes steady, the gate voltage of M17 recovers to Vb2 [4]. In steady
state, the current flow through M17 is around 100 nA.
4. Simulation Results
The proposed ultra-low quiescent LDO regulator was designed and simulated in a 0.18 μm CMOS technology.
The input voltage range of the LDO is designed from 1.8 V to 5.5 V and the output voltage is set to 1.6 V. The
Figure 2. S mal l-signal modeling of the proposed LDO.
+g
m1
x1 -g
mp
+g
mc
R
1
C
1
R
O
C
L
1/g
mc
C
C
V
out
V
in

L. J. Du et al.
480
output capacitor is 1 μF. The output current range is from 0 to 100 mA when the dropout voltage is 0.2 V. The
LDO consumes an ultra-low quiescent current of 550 nA under no-load condition, while a quiescent current of
135 μA is dissipated at full load condition.
The stability of the LDO under different load conditions was verified. Figure 4 shows the simulated phase
margin of the loop-gain transfer function under different load currents. The minimum phase margin is always
larger than 54˚ for the entire range of load current.
Figure 5 shows the transient response of the proposed LDO when the load current is pulsating between 0 and
100mA with pulse rise and fall time of 1 μs. With the use of a 1μF output capacitor, the maximum output vol-
tage variation is less than 20 mV when dropout voltage is 0.2 V, which includes output undershoots, overshoots
and variations due to load regulation. It can be seen that the output voltage was hardly regulated to the nominal
value without overshoot reduction. The line transient response is shown in Figure 6. The supply voltage
changes between 1.8 V and 2 V in 10 μs with an output current of 100 mA. The simulated result shows that the
total output voltage variations are less than 2 mV.
Finally, a comparison of some reported LDOs is given in Table 1. A figure of merit used in [3] is adopted
here to compare the transient response of different LDOs. The smaller FOM value, the better is the transient
performance metric. The proposed design achieves the smallest FOM value among the recently reported works.
Figure 3. Schematic of the proposed LDO regulator.
Figure 4. Phase margin of the proposed LDO loop-
gain transfer function under different load currents
with a 1 μF output capacitor.
M
0
M
1
M
2
M
7
M
8
M
5
M
6
M
3
M
4
M
10
M
9
V
b4
M
13
V
b5
M
16
M
15
M
P
M
12
M
11
V
b2
R
1
M
17
M
18
C
1
M
19
M
20
M
21
C
L
R
O
V
b1
V
fb
V
ref
C
C
M
14
V
fb
V
b2
V
b3
V
out
V
in
Fol ded-cascode error amplifierAdaptive biasing voltage bufferPower transistor and overshoot
reduction
80nA60nA60nA 50nA100nA
50nA
100nA

L. J. Du et al.
481
Figure 5. Simulated load transient response of the pro-
posed LDO.
Figure 6. Simulated line transient response of the pro-
posed LDO.
Table 1. Performance comparison with previously reported LDOs.
[5] 2010 [6] 2011 [8] 2013 [9] 2013 This work
Technology (μm) 0.35 0.35 0.18 0.09 0.18
Vin (V) 2 3.3-7 1.8 1 1.8-5
Vout (V) 1.8 3 1.64 0.85 1.6
Imax (mA) 100 100 150 100 100
Iq (μA) 4 0.5 0.33 60 0.55
Vdo (mV) 200 300 160 150 200
Load regulation (mV/mA)
N/A 0.15 0.33 0.28 0.03
CL (μF) 1-10 1 13.125 1 1
ΔVout (mV) 55 150 48 28 20
Tr (μs) 0.55 1.5 4.2 0.28 0.2
FOM* (ns) 0.022 0.0075 0.00924 0.168 0.0011
*
, max (/ ) rq L FOMT II=
.

L. J. Du et al.
482
5. Conclusion
In this paper, an ultra-low quiescent current low dropout regulator based on an adaptive-biasing voltage buffer
and an overshoot reduction network has been presented. The adaptive-biasing voltage buffer is employed both
for frequency compensation and slew rate enhancement. In addition, an overshoot reduction net-work is used to
regulate the output voltage back to its normal value when the output is switched from full load to no load. The
LDO is able to source up to 100 mA of output current and dissipates only 550 nA quiescent current at no load
condition.
Acknowledgem ents
This paper is supported by Fudan University State Key Laboratory of ASIC & System (12KF001), Fudan Uni-
versity State Key Laboratory of ASIC & System Senior Visiting Scholarship (11FG029), Intercollegiate Key
Project of Nature Science of Anhui Province (KJ2011A213) and Science and Research Funds of Hefei Univer-
sity of Technology (2013HGXJ0192).
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