Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide
Open Access JCC
dimension of the switch (550 nm) is the main interest in
reduction of the loss. It means that this plasmonic device
will be more suitable for designing high dense integrated
optical devices. Using F inite Element Method (FEM) the
operation of the switch is investigated. The overall length
of the switch is 550 nm and extinction ratio is −14.66 dB.
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