_{1}

^{*}

Nanoscale superlattice has been investigated theoretically. It has been shown that the deformation effects on the energy spectrum of nanoscale superlattice by changing the interatomic distances as well as varying the width and height of the potential barrier. The potential deformation has been estimated. It has been shown that for different edges of forbidden bands the deformation potential has different values. It has been also analyzed the dependence of the effective mass on energy. It has been determined that the effective mass crosses periodically the zero mark. It has been concluded that this phenomena contributes to the periodic change of the oscillation frequency de Haas-van Alphen effect.

Development of nanotechnology caused increasing requirements of atomic size films. For example, a new low- dimensional nanostructure graphene promises to be one of the key elements of the future nanoelectronics [

Under influence of applied voltage film and the substrate should experience different degrees of deformation; however because of they being firm connected each to other the film (due to its small thickness in comparison with that substrate) is compressed (or stretched) to conform to the size of the substrate [

The effect of deformation on the tensosensitivity films Bi_{2}Te_{3} and Sb_{2}Te_{3} obtained by vacuum deposition [

In the model of Kronig-Penney simple rectangular potential barriers are used [

Here_{0}-the free electron mass, k-wave vector, E-

electron energy, U-potential barrier’s height. Using Equation (1) can be obtained dependence of the energy E on the wave vector k. The influence of the periodic potential depends on the magnitude of this potential as well as the distance between the potential barriers [

Thus deforming semiconductor film we act upon its energy spectrum by changing distance between the potential barriers and potential barrier’s width b.

Knowing how change the forbidden band

Here

It should be noted that the calculations allow us to determine only the change of the band gap [

With the help of programme Maple 9.5 the calculated was made and graphs of dependence of wave vector k of the electron’s energy E were drawn. At the calculation the following expression was used:

Let’s consider the energy band in which the valence band and conduction bands are shown in

of the graphs of the dependence of energy on the wave vector for the electronic states at changing of the thick- ness of the potential barriers is shown there. If the sample is stretched so the relative change of the length defines ε, then the bands shifted slightly as it is indicated on the right of

Basing on the data of _{1} = 0.1 nm, the forbidden band’s edge

both cases are the same a = 1 nm. Substituting these values in (2), we get:

In addition to the thickness and width of the potential barrier of the potential well another important factor have an influence on the energy spectrum of the sample, that is the potential barrier’s height U. Analysis of

The dependence of the effective mass on energy has been also analyzed. The expression has been used for that:

Here

Obtained results are shown in

Number Section | b_{1}, nm | b_{2}, nm | a, nm | E_{1}, eV | E_{2}, eV | Δ, eV |
---|---|---|---|---|---|---|

1-Section | 0.1 | 0.05 | 1 | 1.25 | 1.41 | 3.4375 |

2-Section | 1.47 | 1.50 | 0.6875 | |||

3-Section | 2.76 | 3.03 | 5.7750 | |||

4-Section | 3.00 | 3.22 | 4.8125 | |||

5-Section | 5.00 | 5.50 | 11.0000 | |||

6-Section | 5.22 | 5.59 | 8.2500 |

The effect of de Haas-van Alphen (dHvA) in nanostructures of cadmium fluoride was researched in [

authors of [^{*}-ef-

fective mass).

On the basis of the study it can be concluded that the electron energy spectrum of the potential barriers depends on the barrier’s size. Dimensions of the barriers can be changed by the deformation of thin semiconductor films. High tensosensitivity of thin semiconductor films [

Thus, we can make the following deductions:

-Using dependence of the energy on the wave vector (see

-The deformation potential has different values for different edges of forbidden bands: the left edges of the bands have higher values than the right one (see

-With different widths of the potential barriers b wave vector k has different values, and the value of the wave vector decreases with increasing width of the potential barriers.

-Dependence of the effective mass on energy (shown in