A. TOUATI ET AL.
180
and drain-source voltage are increased, and decrease when
the T and Vds are decreased.
The decrease in the oscillation period with increasing
width implies an increase in the island capacitance. This
is because the gate-islands capacitances (Cs) now are
associated with the part of the electric field between the
gates and island which passes through the oxide. The
effect of the quantum dot size can be observed directly in
the single-electron characteristics, as this is proportional
to the island capacitance and therefore determines the
Coulomb gap and the current oscillation period.
4. Conclusion
We have studied the temperature influence on one of
promising single electron system that consists of two
parallel 1D arrays. A Monte Carlo simulation showed
that the stray capacitor C0 the coupling capacitor Cox, and
the bias voltage Vds play important roles to determine the
electron transport on the system. On the other hand the
tunneling rate of the system, the charging energy, and the
temperature has a direct influence on the Ceff values. Fi-
nally, the obtained results are very interesting which give
insight into the behavior of the tow one-dimensional with
both arrays (2M) should provide guideposts for future
implementation of logical memory circuits.
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